Backdiffraction Configuration for X-ray Standing Wave formed just above the Surface of the Crystal Containing a Stacking Fault

Main Article Content

Bezirganyan, Hakob P
Bezirganyan, Siranush E
Bezirganyan, Hayk H
Beziganyan , Petros H

Abstract

Presented theoretical paper concerns the application of the extremely sensitive Grazing-Angle Incidence X-ray Backdiffraction (GIXB) technique for investigations of the crystal containing a stacking fault. Fault plane is assumed parallel to the crystal entrance surface. It is shown that entire x-ray wave field intensity in vacuum is modulated periodically along the vacuum-crystal surface with the same period as the crystal diffracting net planes. X-ray wave field short-period modulation along the vacuum-crystal surface gives a possibility to determine the lateral positions if overlaid adsorbed atoms with respect to crystal lattice atoms by combination of GIXB with the X-ray Standing-Wave (XSW) technique i.e. by monitoring the secondary emissions. The development of such non-destructive investigation methods is in the focus of fundamental aspects of materials research, crystal engineering etc.

Downloads

Download data is not yet available.

Article Details

How to Cite
Hakob P, B., Siranush E, B., Hayk H, B., & , Petros H, B. (2002). Backdiffraction Configuration for X-ray Standing Wave formed just above the Surface of the Crystal Containing a Stacking Fault. Malaysian Journal of Science, 21, 31–40. Retrieved from https://juku.um.edu.my/index.php/MJS/article/view/8855
Section
Original Articles